IXGH28N60BD1
IGBT 600V 40A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH28N60BD1 is a high-efficiency N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current of 40A, with a pulsed capability of 80A. The on-state voltage (Vce(on)) is specified at 2V maximum at 15V gate voltage and 28A collector current. Key switching parameters include a gate charge of 68 nC, a turn-on delay (Td(on)) of 15ns, and a turn-off delay (Td(off)) of 175ns at 25°C, with switching energy (Eoff) of 2mJ under test conditions of 480V, 28A, 10 Ohm, and 15V. With a maximum power dissipation of 150W and an operating temperature range of -55°C to 150°C, this IGBT is suitable for use in industrial motor drives, power supplies, and welding equipment. The device is supplied in a TO-247AD package for through-hole mounting, delivered in tube packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 28A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/175ns |
| Switching Energy | 2mJ (off) |
| Test Condition | 480V, 28A, 10Ohm, 15V |
| Gate Charge | 68 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 150 W |
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