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IXGH28N60BD1

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IXGH28N60BD1

IGBT 600V 40A 150W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH28N60BD1 is a high-efficiency N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current of 40A, with a pulsed capability of 80A. The on-state voltage (Vce(on)) is specified at 2V maximum at 15V gate voltage and 28A collector current. Key switching parameters include a gate charge of 68 nC, a turn-on delay (Td(on)) of 15ns, and a turn-off delay (Td(off)) of 175ns at 25°C, with switching energy (Eoff) of 2mJ under test conditions of 480V, 28A, 10 Ohm, and 15V. With a maximum power dissipation of 150W and an operating temperature range of -55°C to 150°C, this IGBT is suitable for use in industrial motor drives, power supplies, and welding equipment. The device is supplied in a TO-247AD package for through-hole mounting, delivered in tube packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)25 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 28A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C15ns/175ns
Switching Energy2mJ (off)
Test Condition480V, 28A, 10Ohm, 15V
Gate Charge68 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max150 W

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