IXGH28N60B
IGBT 600V 40A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH28N60B is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 40A, with a pulsed current rating of 80A. Its low on-state voltage of 2V at 15V gate-emitter voltage and 28A collector current, coupled with a maximum power dissipation of 150W, ensures efficient operation. Key parameters include a gate charge of 68nC and switching times of 15ns turn-on and 175ns turn-off under specified test conditions (480V, 28A, 10 Ohm, 15V). The IXGH28N60B features a standard input type and is packaged in a TO-247AD through-hole format. It is suitable for operation across a wide temperature range from -55°C to 150°C. This device finds application in power switching and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 28A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/175ns |
| Switching Energy | 2mJ (off) |
| Test Condition | 480V, 28A, 10Ohm, 15V |
| Gate Charge | 68 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 150 W |
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