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IXGH28N140B3H1

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IXGH28N140B3H1

IGBT 1400V 60A 300W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH28N140B3H1 is a high-performance GenX3™ Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device offers a robust 1400V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability up to 150A. Featuring a low on-state voltage of 3.6V at 15V Vge and 28A Ic, it minimizes conduction losses. The TO-247AD package provides excellent thermal dissipation for up to 300W of power. Switching characteristics include a gate charge of 88 nC and switching energies of 3.6mJ (on) and 3.9mJ (off) at 960V, 28A. Typical turn-on and turn-off times are 16ns and 190ns respectively. This component is suitable for use in power conversion systems, industrial motor drives, and high-voltage power supplies.

Additional Information

Series: GenX3™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)350 ns
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 28A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C16ns/190ns
Switching Energy3.6mJ (on), 3.9mJ (off)
Test Condition960V, 28A, 5Ohm, 15V
Gate Charge88 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)1400 V
Current - Collector Pulsed (Icm)150 A
Power - Max300 W

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IXYS - IXGH28N140B3H1 - Microchip USA