IXGH25N100AU1
IGBT 1000V 50A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXGH25N100AU1 is a robust Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This discrete component offers a substantial collector-emitter breakdown voltage of 1000V and a continuous collector current capability of 50A, with a pulsed current rating of 100A. The device dissipates up to 200W and features a low on-state voltage (Vce(on)) of 4V at a gate-emitter voltage (Vge) of 15V and collector current (Ic) of 25A. With a gate charge of 130 nC and a reverse recovery time of 50 ns, the IXGH25N100AU1 is well-suited for demanding power conversion circuits. Its TO-247AD through-hole package ensures reliable thermal management. This IGBT finds application in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 25A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/500ns |
| Switching Energy | 5mJ (off) |
| Test Condition | 800V, 25A, 33Ohm, 15V |
| Gate Charge | 130 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 200 W |
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