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IXGH25N100AU1

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IXGH25N100AU1

IGBT 1000V 50A 200W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXGH25N100AU1 is a robust Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This discrete component offers a substantial collector-emitter breakdown voltage of 1000V and a continuous collector current capability of 50A, with a pulsed current rating of 100A. The device dissipates up to 200W and features a low on-state voltage (Vce(on)) of 4V at a gate-emitter voltage (Vge) of 15V and collector current (Ic) of 25A. With a gate charge of 130 nC and a reverse recovery time of 50 ns, the IXGH25N100AU1 is well-suited for demanding power conversion circuits. Its TO-247AD through-hole package ensures reliable thermal management. This IGBT finds application in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)50 ns
Vce(on) (Max) @ Vge, Ic4V @ 15V, 25A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C100ns/500ns
Switching Energy5mJ (off)
Test Condition800V, 25A, 33Ohm, 15V
Gate Charge130 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector Pulsed (Icm)100 A
Power - Max200 W

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