IXGH25N100A
IGBT 1000V 50A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH25N100A is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 1000V collector-emitter breakdown voltage and can handle a continuous collector current of up to 50A, with a pulsed capability of 100A. The device offers a maximum power dissipation of 200W and a low on-state voltage of 4V at 25A and 15V gate-emitter voltage. With a gate charge of 130 nC, it is suitable for applications requiring efficient high-power switching. The TO-247AD package facilitates through-hole mounting and is supplied in bulk packaging. Operating across a wide temperature range of -55°C to 150°C, this IGBT is utilized in power supplies, industrial motor drives, and high-power inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 25A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/500ns |
| Switching Energy | 5mJ (off) |
| Test Condition | 800V, 25A, 33Ohm, 15V |
| Gate Charge | 130 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 200 W |
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