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IXGH25N100A

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IXGH25N100A

IGBT 1000V 50A 200W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH25N100A is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 1000V collector-emitter breakdown voltage and can handle a continuous collector current of up to 50A, with a pulsed capability of 100A. The device offers a maximum power dissipation of 200W and a low on-state voltage of 4V at 25A and 15V gate-emitter voltage. With a gate charge of 130 nC, it is suitable for applications requiring efficient high-power switching. The TO-247AD package facilitates through-hole mounting and is supplied in bulk packaging. Operating across a wide temperature range of -55°C to 150°C, this IGBT is utilized in power supplies, industrial motor drives, and high-power inverters.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic4V @ 15V, 25A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C100ns/500ns
Switching Energy5mJ (off)
Test Condition800V, 25A, 33Ohm, 15V
Gate Charge130 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector Pulsed (Icm)100 A
Power - Max200 W

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