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IXGH25N100

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IXGH25N100

IGBT 1000V 50A 200W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH25N100 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device offers a robust 1000 V collector-emitter breakdown voltage and a continuous 50 A collector current (Ic), with a pulsed capability of 100 A (Icm). Key parameters include a maximum power dissipation of 200 W and a gate charge of 130 nC. The IGBT exhibits a low on-state voltage (Vce(on)) of 3.5 V at 15 V gate-emitter voltage and 25 A collector current. Switching characteristics are defined by typical turn-on and turn-off delays of 100 ns and 500 ns respectively, at 25°C under a test condition of 800 V, 25 A, 33 Ohms, and 15 V. The IXGH25N100 is housed in a TO-247AD package, suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 25A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C100ns/500ns
Switching Energy5mJ (off)
Test Condition800V, 25A, 33Ohm, 15V
Gate Charge130 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector Pulsed (Icm)100 A
Power - Max200 W

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