IXGH25N100
IGBT 1000V 50A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH25N100 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device offers a robust 1000 V collector-emitter breakdown voltage and a continuous 50 A collector current (Ic), with a pulsed capability of 100 A (Icm). Key parameters include a maximum power dissipation of 200 W and a gate charge of 130 nC. The IGBT exhibits a low on-state voltage (Vce(on)) of 3.5 V at 15 V gate-emitter voltage and 25 A collector current. Switching characteristics are defined by typical turn-on and turn-off delays of 100 ns and 500 ns respectively, at 25°C under a test condition of 800 V, 25 A, 33 Ohms, and 15 V. The IXGH25N100 is housed in a TO-247AD package, suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 25A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/500ns |
| Switching Energy | 5mJ (off) |
| Test Condition | 800V, 25A, 33Ohm, 15V |
| Gate Charge | 130 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 200 W |
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