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IXGH24N60C4D1

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IXGH24N60C4D1

IGBT 600V 56A 190W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH24N60C4D1 is a 600V, 56A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This PT IGBT features a maximum collector current (Ic) of 56A and a pulsed collector current (Icm) of 130A, with a continuous collector current of 24A at a Vge of 15V and a Vce(on) of 2.7V. The device boasts a low switching energy with 400µJ (on) and 300µJ (off) at the specified test conditions. Key parameters include a gate charge of 64 nC and a reverse recovery time (trr) of 25 ns. The IXGH24N60C4D1 is housed in a TO-247AD package for through-hole mounting, offering a maximum power dissipation of 190W and an operating temperature range of -55°C to 150°C. This component is suitable for use in industrial power supplies, motor control, and welding equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)25 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 24A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C21ns/143ns
Switching Energy400µJ (on), 300µJ (off)
Test Condition360V, 24A, 10Ohm, 15V
Gate Charge64 nC
Current - Collector (Ic) (Max)56 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)130 A
Power - Max190 W

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