IXGH24N60C4D1
IGBT 600V 56A 190W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH24N60C4D1 is a 600V, 56A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This PT IGBT features a maximum collector current (Ic) of 56A and a pulsed collector current (Icm) of 130A, with a continuous collector current of 24A at a Vge of 15V and a Vce(on) of 2.7V. The device boasts a low switching energy with 400µJ (on) and 300µJ (off) at the specified test conditions. Key parameters include a gate charge of 64 nC and a reverse recovery time (trr) of 25 ns. The IXGH24N60C4D1 is housed in a TO-247AD package for through-hole mounting, offering a maximum power dissipation of 190W and an operating temperature range of -55°C to 150°C. This component is suitable for use in industrial power supplies, motor control, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 24A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 21ns/143ns |
| Switching Energy | 400µJ (on), 300µJ (off) |
| Test Condition | 360V, 24A, 10Ohm, 15V |
| Gate Charge | 64 nC |
| Current - Collector (Ic) (Max) | 56 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 130 A |
| Power - Max | 190 W |
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