IXGH24N60B
IGBT 600V 48A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH24N60B is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 48 A. With a maximum power dissipation of 150 W and a low on-state voltage of 2.3 V at 15 V gate-emitter voltage and 24 A collector current, it facilitates reduced conduction losses. The TO-247AD package offers robust thermal performance for demanding environments. Key switching parameters include a gate charge of 90 nC and switching energies of 600 µJ (on) and 800 µJ (off) under test conditions of 480 V, 24 A, 10 Ohm, and 15 V. This component is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 24A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/150ns |
| Switching Energy | 600µJ (on), 800µJ (off) |
| Test Condition | 480V, 24A, 10Ohm, 15V |
| Gate Charge | 90 nC |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 150 W |
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