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IXGH24N170A

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IXGH24N170A

IGBT 1700V 24A 250W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXGH24N170A is a Non-Punch-Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device features a 1700 V collector-emitter breakdown voltage and a continuous collector current capability of 24 A at a maximum power dissipation of 250 W. The TO-247AD package facilitates through-hole mounting. Key performance characteristics include a Vce(on) of 6 V at 15 V gate-emitter voltage and 16 A collector current, with a pulsed collector current of 75 A. The gate charge is specified at 140 nC. Switching performance is characterized by a turn-on delay of 21 ns and turn-off delay of 336 ns at 25°C, with switching energies of 2.97 mJ (on) and 790 µJ (off) under test conditions of 850 V, 24 A, 10 Ohm, and 15 V. Operating temperature range is from -55°C to 150°C. This component is suitable for use in power conversion systems within the industrial and renewable energy sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic6V @ 15V, 16A
Supplier Device PackageTO-247AD
IGBT TypeNPT
Td (on/off) @ 25°C21ns/336ns
Switching Energy2.97mJ (on), 790µJ (off)
Test Condition850V, 24A, 10Ohm, 15V
Gate Charge140 nC
Current - Collector (Ic) (Max)24 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)75 A
Power - Max250 W

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