IXGH24N170A
IGBT 1700V 24A 250W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXGH24N170A is a Non-Punch-Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device features a 1700 V collector-emitter breakdown voltage and a continuous collector current capability of 24 A at a maximum power dissipation of 250 W. The TO-247AD package facilitates through-hole mounting. Key performance characteristics include a Vce(on) of 6 V at 15 V gate-emitter voltage and 16 A collector current, with a pulsed collector current of 75 A. The gate charge is specified at 140 nC. Switching performance is characterized by a turn-on delay of 21 ns and turn-off delay of 336 ns at 25°C, with switching energies of 2.97 mJ (on) and 790 µJ (off) under test conditions of 850 V, 24 A, 10 Ohm, and 15 V. Operating temperature range is from -55°C to 150°C. This component is suitable for use in power conversion systems within the industrial and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 16A |
| Supplier Device Package | TO-247AD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/336ns |
| Switching Energy | 2.97mJ (on), 790µJ (off) |
| Test Condition | 850V, 24A, 10Ohm, 15V |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 24 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 250 W |
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