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IXGH24N120C3H1

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IXGH24N120C3H1

IGBT 1200V 48A 250W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS GenX3™ IXGH24N120C3H1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 48A, with a pulsed capability of 96A. It offers a maximum power dissipation of 250W and a low on-state voltage of 4.2V at 15V gate-emitter voltage and 20A collector current. Key switching characteristics include a gate charge of 79 nC, enabling efficient switching with typical turn-on delay (Td(on)) of 16ns and turn-off delay (Td(off)) of 93ns at 25°C. The reverse recovery time (trr) is specified at 70 ns. This IGBT is packaged in a TO-247AD through-hole package, suitable for power electronics in industrial motor drives, renewable energy systems, and power supplies. Operating temperature range is from -55°C to 150°C (TJ).

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)70 ns
Vce(on) (Max) @ Vge, Ic4.2V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C16ns/93ns
Switching Energy1.16mJ (on), 470µJ (off)
Test Condition600V, 20A, 5Ohm, 15V
Gate Charge79 nC
Current - Collector (Ic) (Max)48 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)96 A
Power - Max250 W

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