IXGH24N120C3H1
IGBT 1200V 48A 250W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGH24N120C3H1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 48A, with a pulsed capability of 96A. It offers a maximum power dissipation of 250W and a low on-state voltage of 4.2V at 15V gate-emitter voltage and 20A collector current. Key switching characteristics include a gate charge of 79 nC, enabling efficient switching with typical turn-on delay (Td(on)) of 16ns and turn-off delay (Td(off)) of 93ns at 25°C. The reverse recovery time (trr) is specified at 70 ns. This IGBT is packaged in a TO-247AD through-hole package, suitable for power electronics in industrial motor drives, renewable energy systems, and power supplies. Operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 70 ns |
| Vce(on) (Max) @ Vge, Ic | 4.2V @ 15V, 20A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/93ns |
| Switching Energy | 1.16mJ (on), 470µJ (off) |
| Test Condition | 600V, 20A, 5Ohm, 15V |
| Gate Charge | 79 nC |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 250 W |
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