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IXGH20N60BU1

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IXGH20N60BU1

IGBT 600V 40A 150W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS HiPerFAST™ IGBT, part number IXGH20N60BU1, is a high-performance insulated gate bipolar transistor designed for demanding power switching applications. This robust component features a 600V collector-emitter breakdown voltage and a maximum collector current of 40A, with a power dissipation capability of 150W. The Vce(on) specification of 2V at 15V gate-emitter voltage and 20A collector current ensures efficient operation. Packaged in a standard TO-247AD through-hole configuration, the IXGH20N60BU1 is well-suited for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits where high efficiency and reliability are paramount. Its HiPerFAST™ designation indicates optimized switching characteristics for reduced power losses.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max150 W

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