IXGH20N60BD1
IGBT 600V 40A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT, IXGH20N60BD1, is a 600V N-channel insulated gate bipolar transistor designed for high-efficiency power switching applications. This device features a 40A continuous collector current (Ic) and an 80A pulsed collector current (Icm), with a maximum power dissipation of 150W. The Vce(on) is rated at 2V at 15V gate-emitter voltage (Vge) and 20A collector current. With a typical gate charge of 55 nC and switching times of 15ns turn-on and 110ns turn-off (at 25°C), this IGBT offers fast switching performance. The reverse recovery time (trr) is 25ns. It is housed in a TO-247AD package for through-hole mounting, operating over a temperature range of -55°C to 150°C. Applications for this component include power supplies, motor drives, and industrial automation.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/110ns |
| Switching Energy | 700µJ (off) |
| Test Condition | 480V, 20A, 10Ohm, 15V |
| Gate Charge | 55 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 150 W |
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