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IXGH20N60BD1

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IXGH20N60BD1

IGBT 600V 40A 150W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS HiPerFAST™ IGBT, IXGH20N60BD1, is a 600V N-channel insulated gate bipolar transistor designed for high-efficiency power switching applications. This device features a 40A continuous collector current (Ic) and an 80A pulsed collector current (Icm), with a maximum power dissipation of 150W. The Vce(on) is rated at 2V at 15V gate-emitter voltage (Vge) and 20A collector current. With a typical gate charge of 55 nC and switching times of 15ns turn-on and 110ns turn-off (at 25°C), this IGBT offers fast switching performance. The reverse recovery time (trr) is 25ns. It is housed in a TO-247AD package for through-hole mounting, operating over a temperature range of -55°C to 150°C. Applications for this component include power supplies, motor drives, and industrial automation.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)25 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C15ns/110ns
Switching Energy700µJ (off)
Test Condition480V, 20A, 10Ohm, 15V
Gate Charge55 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max150 W

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