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IXGH20N60B

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IXGH20N60B

IGBT 600V 40A 150W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH20N60B is a HiPerFAST™ Series Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This TO-247AD package device offers a robust 600V collector-emitter breakdown voltage and a continuous collector current capability of 40A, with a pulsed current rating of 80A. Key performance characteristics include a low on-state voltage of 2V at 15V Vge and 20A Ic, and a maximum power dissipation of 150W. Switching performance is optimized with typical turn-on delay (Td(on)) of 15ns and turn-off delay (Td(off)) of 150ns at 25°C, with associated switching energies of 150µJ (on) and 700µJ (off) under specified test conditions of 480V, 20A, 10 Ohm, and 15V. The IXGH20N60B is suitable for demanding applications in renewable energy, industrial motor drives, and uninterruptible power supplies. It features a standard input type and operates across a wide temperature range of -55°C to 150°C.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C15ns/150ns
Switching Energy150µJ (on), 700µJ (off)
Test Condition480V, 20A, 10Ohm, 15V
Gate Charge90 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max150 W

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