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IXGH20N60A

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IXGH20N60A

IGBT 600V 40A 150W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH20N60A is a 600V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, packaged in a TO-247AD, offers a maximum power dissipation of 150W and a collector current of 40A, with a pulsed capability of 80A. Key parameters include a gate charge of 100 nC and a low on-state voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 20A collector current. Its switching characteristics at 25°C are 100ns turn-on time and 600ns turn-off time, with a switching energy of 1.5mJ (off) under test conditions of 480V, 20A, 82 Ohm, and 15V. The operating temperature range is from -55°C to 150°C. This device is suitable for use in power supplies, motor drives, and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C100ns/600ns
Switching Energy1.5mJ (off)
Test Condition480V, 20A, 82Ohm, 15V
Gate Charge100 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max150 W

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