IXGH20N60
IGBT 600V 40A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH20N60 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 40 A, with a pulsed current rating (Icm) of 80 A. It offers a low on-state voltage (Vce(on)) of 2.5 V at 15 V gate-emitter voltage and 20 A collector current, facilitating efficient power transfer. The gate charge is specified at 100 nC, contributing to optimized switching characteristics. With a maximum power dissipation of 150 W and a switching energy (Eoff) of 1.5 mJ under test conditions of 480 V, 20 A, 82 Ohm, and 15 V, it is suitable for applications in industrial power supplies, motor drives, and welding equipment. The IXGH20N60 is housed in a TO-247AD package for through-hole mounting and operates across a wide temperature range from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/600ns |
| Switching Energy | 1.5mJ (off) |
| Test Condition | 480V, 20A, 82Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 150 W |
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