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IXGH20N60

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IXGH20N60

IGBT 600V 40A 150W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH20N60 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 40 A, with a pulsed current rating (Icm) of 80 A. It offers a low on-state voltage (Vce(on)) of 2.5 V at 15 V gate-emitter voltage and 20 A collector current, facilitating efficient power transfer. The gate charge is specified at 100 nC, contributing to optimized switching characteristics. With a maximum power dissipation of 150 W and a switching energy (Eoff) of 1.5 mJ under test conditions of 480 V, 20 A, 82 Ohm, and 15 V, it is suitable for applications in industrial power supplies, motor drives, and welding equipment. The IXGH20N60 is housed in a TO-247AD package for through-hole mounting and operates across a wide temperature range from -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C100ns/600ns
Switching Energy1.5mJ (off)
Test Condition480V, 20A, 82Ohm, 15V
Gate Charge100 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max150 W

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