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IXGH20N120BD1

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IXGH20N120BD1

IGBT 1200V 40A 190W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH20N120BD1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This TO-247AD packaged device offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 40 A. With a maximum power dissipation of 190 W, it is well-suited for use in industrial motor drives, power supplies, and renewable energy systems. The device features a typical gate charge of 72 nC and exhibits switching times of 25 ns (on) and 150 ns (off) at 25°C under specified test conditions. The on-state voltage drop (Vce(on)) is 3.4 V at 15 V gate-source voltage and 20 A collector current. Its wide operating temperature range of -55°C to 150°C (TJ) ensures reliable performance in challenging environments.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C25ns/150ns
Switching Energy2.1mJ (off)
Test Condition-
Gate Charge72 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max190 W

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