IXGH20N120BD1
IGBT 1200V 40A 190W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH20N120BD1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This TO-247AD packaged device offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 40 A. With a maximum power dissipation of 190 W, it is well-suited for use in industrial motor drives, power supplies, and renewable energy systems. The device features a typical gate charge of 72 nC and exhibits switching times of 25 ns (on) and 150 ns (off) at 25°C under specified test conditions. The on-state voltage drop (Vce(on)) is 3.4 V at 15 V gate-source voltage and 20 A collector current. Its wide operating temperature range of -55°C to 150°C (TJ) ensures reliable performance in challenging environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/150ns |
| Switching Energy | 2.1mJ (off) |
| Test Condition | - |
| Gate Charge | 72 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 190 W |
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