IXGH20N120B
IGBT 1200V 40A 190W TO247Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGH20N120B is a power semiconductor device designed for high-voltage applications. This Punch-Through (PT) Insulated Gate Bipolar Transistor (IGBT) features a collector-emitter breakdown voltage of 1200V and a continuous collector current capability of 40A, with a pulsed current rating of 80A. The device dissipates up to 190W and exhibits a low on-state voltage (Vce(on)) of 3.4V at 15V gate-emitter voltage and 20A collector current, under the test condition of 960V, 20A, 10 Ohm, 15V. Switching characteristics include an off-state switching energy of 2.1mJ and typical on/off delays of 25ns/150ns at 25°C. The IXGH20N120B is housed in a TO-247AD package, supporting through-hole mounting and operating within a temperature range of -55°C to 150°C. This component finds application in power conversion and motor drive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 25ns/150ns |
| Switching Energy | 2.1mJ (off) |
| Test Condition | 960V, 20A, 10Ohm, 15V |
| Gate Charge | 72 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 190 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXLF19N250A
IGBT 2500V 32A 250W I4PAC
