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IXGH20N120A3

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IXGH20N120A3

IGBT 1200V 40A 180W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH20N120A3 is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This PT IGBT features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 120A. Its low on-state voltage of 2.5V at 15V gate-emitter voltage and 20A collector current, coupled with a maximum power dissipation of 180W, ensures efficient operation. Switching characteristics include typical turn-on delay of 16ns and turn-off delay of 290ns at 25°C, with switching energies of 2.85mJ (on) and 6.47mJ (off) under specified test conditions. The TO-247AD package facilitates through-hole mounting. This component is well-suited for power conversion systems in industrial and renewable energy sectors.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C16ns/290ns
Switching Energy2.85mJ (on), 6.47mJ (off)
Test Condition960V, 20A, 10Ohm, 15V
Gate Charge50 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)120 A
Power - Max180 W

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