IXGH20N120A3
IGBT 1200V 40A 180W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH20N120A3 is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This PT IGBT features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 120A. Its low on-state voltage of 2.5V at 15V gate-emitter voltage and 20A collector current, coupled with a maximum power dissipation of 180W, ensures efficient operation. Switching characteristics include typical turn-on delay of 16ns and turn-off delay of 290ns at 25°C, with switching energies of 2.85mJ (on) and 6.47mJ (off) under specified test conditions. The TO-247AD package facilitates through-hole mounting. This component is well-suited for power conversion systems in industrial and renewable energy sectors.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/290ns |
| Switching Energy | 2.85mJ (on), 6.47mJ (off) |
| Test Condition | 960V, 20A, 10Ohm, 15V |
| Gate Charge | 50 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 180 W |
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