IXGH17N100U1
IGBT 1000V 34A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH17N100U1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1000V collector-emitter breakdown voltage and a continuous collector current capability of 34A, with a pulsed current rating of 68A. The Vce(on) is specified at a maximum of 3.5V at 15V gate-emitter voltage and 17A collector current. The switching performance is characterized by a typical turn-on delay of 100ns and turn-off delay of 500ns at 25°C, with a reverse recovery time of 50ns. With a maximum power dissipation of 150W and a low switching energy of 3mJ (off), this IGBT is suitable for applications in industrial motor drives, power supplies, and renewable energy systems. It is packaged in a TO-247AD through-hole format and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 17A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/500ns |
| Switching Energy | 3mJ (off) |
| Test Condition | 800V, 17A, 82Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 68 A |
| Power - Max | 150 W |
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