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IXGH17N100AU1

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IXGH17N100AU1

IGBT 1000V 34A 150W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXGH17N100AU1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 1000 V collector-emitter breakdown voltage and a continuous collector current of 34 A, with a pulsed current capability of 68 A. Its robust design includes a maximum power dissipation of 150 W and a low on-state voltage of 4 V at 15 V gate voltage and 17 A collector current. The gate charge is specified at 100 nC, contributing to efficient switching performance with typical turn-on and turn-off delays of 100 ns and 500 ns respectively at 25°C. With a reverse recovery time of 50 ns, this IGBT is suitable for high-frequency switching. The IXGH17N100AU1 is housed in a TO-247AD package for through-hole mounting, ensuring reliable thermal management. It operates across a wide temperature range from -55°C to 150°C. This device finds application in power supplies, motor control, and industrial power conversion systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)50 ns
Vce(on) (Max) @ Vge, Ic4V @ 15V, 17A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C100ns/500ns
Switching Energy3mJ (off)
Test Condition800V, 17A, 82Ohm, 15V
Gate Charge100 nC
Current - Collector (Ic) (Max)34 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector Pulsed (Icm)68 A
Power - Max150 W

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