IXGH17N100AU1
IGBT 1000V 34A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXGH17N100AU1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 1000 V collector-emitter breakdown voltage and a continuous collector current of 34 A, with a pulsed current capability of 68 A. Its robust design includes a maximum power dissipation of 150 W and a low on-state voltage of 4 V at 15 V gate voltage and 17 A collector current. The gate charge is specified at 100 nC, contributing to efficient switching performance with typical turn-on and turn-off delays of 100 ns and 500 ns respectively at 25°C. With a reverse recovery time of 50 ns, this IGBT is suitable for high-frequency switching. The IXGH17N100AU1 is housed in a TO-247AD package for through-hole mounting, ensuring reliable thermal management. It operates across a wide temperature range from -55°C to 150°C. This device finds application in power supplies, motor control, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 17A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/500ns |
| Switching Energy | 3mJ (off) |
| Test Condition | 800V, 17A, 82Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 68 A |
| Power - Max | 150 W |
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