IXGH17N100A
IGBT 1000V 34A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH17N100A is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 1000V collector-emitter breakdown voltage and a continuous collector current capability of 34A, with a pulsed current rating of 68A. The IXGH17N100A offers a maximum power dissipation of 150W and a low on-state voltage (Vce(on)) of 4V at 15V gate-emitter voltage and 17A collector current, specified under 800V, 17A, 82 Ohm, 15V test conditions. Switching characteristics include an off-state switching energy of 3mJ and typical turn-on/turn-off delays of 100ns/500ns at 25°C. The IGBT is housed in a TO-247AD package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C. This component finds application in high-power switching and conversion circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 17A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/500ns |
| Switching Energy | 3mJ (off) |
| Test Condition | 800V, 17A, 82Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 68 A |
| Power - Max | 150 W |
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