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IXGH17N100A

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IXGH17N100A

IGBT 1000V 34A 150W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXGH17N100A is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 1000V collector-emitter breakdown voltage and a continuous collector current capability of 34A, with a pulsed current rating of 68A. The IXGH17N100A offers a maximum power dissipation of 150W and a low on-state voltage (Vce(on)) of 4V at 15V gate-emitter voltage and 17A collector current, specified under 800V, 17A, 82 Ohm, 15V test conditions. Switching characteristics include an off-state switching energy of 3mJ and typical turn-on/turn-off delays of 100ns/500ns at 25°C. The IGBT is housed in a TO-247AD package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C. This component finds application in high-power switching and conversion circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic4V @ 15V, 17A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C100ns/500ns
Switching Energy3mJ (off)
Test Condition800V, 17A, 82Ohm, 15V
Gate Charge100 nC
Current - Collector (Ic) (Max)34 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector Pulsed (Icm)68 A
Power - Max150 W

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