IXGH15N120C
IGBT 1200V 30A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS Lightspeed™ IXGH15N120C is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a robust 1200V collector-emitter breakdown voltage and a continuous collector current rating of 30A, expandable to 60A pulsed. With a maximum power dissipation of 150W and a low Vce(on) of 3.8V at 15V/15A, it offers excellent efficiency. The device exhibits a typical gate charge of 69 nC and switching times of 25ns turn-on and 150ns turn-off at 25°C, verified under a 960V, 15A, 10 Ohm, 15V test condition. Its TO-247AD package facilitates through-hole mounting and operation across a wide temperature range of -55°C to 150°C (TJ). The IXGH15N120C is suitable for use in motor drives, industrial power supplies, and renewable energy systems.
Additional Information
Series: Lightspeed™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 15A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/150ns |
| Switching Energy | 1.05mJ (off) |
| Test Condition | 960V, 15A, 10Ohm, 15V |
| Gate Charge | 69 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
IXGA15N100C
IGBT 1000V 30A 150W TO263AA
IXGP15N100C
IGBT 1000V 30A 150W TO220AB
IXGP15N120C
IGBT 1200V 30A 200W TO220AB
