IXGH15N120BD1
IGBT 1200V 30A 150W TO247ADManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGH15N120BD1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 30A, with a pulsed capability of 60A. The Vce(on) is specified at 3.2V maximum at 15V gate-emitter voltage and 15A collector current. With a maximum power dissipation of 150W, it is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and electric vehicle charging infrastructure. The device offers a typical gate charge of 69 nC and a reverse recovery time of 40 ns, contributing to efficient switching performance. The IXGH15N120BD1 is housed in a TO-247AD package for through-hole mounting, with an operating temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 15A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/150ns |
| Switching Energy | 1.75mJ (off) |
| Test Condition | 960V, 15A, 10Ohm, 15V |
| Gate Charge | 69 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXYK140N90C3
IGBT 900V 310A 1630W TO264
