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IXGH12N60CD1

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IXGH12N60CD1

IGBT 600V 24A 100W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH12N60CD1 is a HiPerFAST™, Lightspeed™ series N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. This component offers a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 24 A, with a pulsed capability of 48 A. Featuring a low on-state voltage of 2.7 V at 15 V gate-emitter voltage and 12 A collector current, it minimizes conduction losses. The device exhibits excellent switching characteristics with typical turn-on and turn-off delays of 20 ns and 60 ns respectively at 25°C, and a switching energy of 90 µJ (off) under specified test conditions. With a maximum power dissipation of 100 W and an operating temperature range of -55°C to 150°C, it is suitable for demanding power conversion circuits. Packaged in a TO-247AD, this through-hole device is commonly employed in industrial automation, power supplies, and motor drive applications.

Additional Information

Series: HiPerFAST™, Lightspeed™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)35 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C20ns/60ns
Switching Energy90µJ (off)
Test Condition480V, 12A, 18Ohm, 15V
Gate Charge32 nC
Current - Collector (Ic) (Max)24 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)48 A
Power - Max100 W

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