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IXGH12N60BD1

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IXGH12N60BD1

IGBT 600V 24A 100W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH12N60BD1 is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 24 A, with a pulsed current rating of 48 A. The IXGH12N60BD1 offers a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 12 A collector current, contributing to reduced conduction losses. Optimized for fast switching, it exhibits a typical turn-on delay of 20 ns and turn-off delay of 150 ns at 25°C, with a reverse recovery time of 35 ns. With a maximum power dissipation of 100 W and a gate charge of 32 nC, this IGBT is suitable for demanding applications in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits. The device is packaged in a TO-247AD through-hole mounting configuration for robust thermal management, operating across a junction temperature range of -55°C to 150°C.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)35 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 12A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C20ns/150ns
Switching Energy500µJ (off)
Test Condition480V, 12A, 18Ohm, 15V
Gate Charge32 nC
Current - Collector (Ic) (Max)24 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)48 A
Power - Max100 W

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