IXGH12N60B
IGBT 600V 24A 100W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT IXGH12N60B is a high-performance insulated gate bipolar transistor designed for demanding power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 24A, with a pulsed capability of 48A. The Vce(on) is specified at 2.1V maximum at 15V gate-emitter voltage and 12A collector current. With a gate charge of 32 nC, this device offers efficient switching characteristics, indicated by typical turn-on and turn-off delays of 20ns and 150ns respectively at 25°C. The maximum power dissipation is 100W. The IXGH12N60B is housed in a TO-247AD package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C. This device is commonly employed in industrial power supplies, motor control, and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 12A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/150ns |
| Switching Energy | 500µJ (off) |
| Test Condition | 480V, 12A, 18Ohm, 15V |
| Gate Charge | 32 nC |
| Current - Collector (Ic) (Max) | 24 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 48 A |
| Power - Max | 100 W |
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