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IXGH10N300

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IXGH10N300

IGBT 3000V 18A 100W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXGH10N300 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) with a 3000V collector-emitter breakdown voltage and a continuous collector current rating of 18A. This component is housed in a TO-247AD package, designed for through-hole mounting. It offers a maximum power dissipation of 100W and a pulsed collector current capability of 40A. The gate charge is specified at 32 nC, with a Vce(on) of 5.2V at 15V Vge and 30A Ic. The IXGH10N300 operates across a wide temperature range of -55°C to 150°C. This device is commonly utilized in high-voltage power conversion applications such as industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic5.2V @ 15V, 30A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge32 nC
Current - Collector (Ic) (Max)18 A
Voltage - Collector Emitter Breakdown (Max)3000 V
Current - Collector Pulsed (Icm)40 A
Power - Max100 W

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