Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

IXGH10N300

Banner
productimage

IXGH10N300

IGBT 3000V 18A 100W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXGH10N300 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) with a 3000V collector-emitter breakdown voltage and a continuous collector current rating of 18A. This component is housed in a TO-247AD package, designed for through-hole mounting. It offers a maximum power dissipation of 100W and a pulsed collector current capability of 40A. The gate charge is specified at 32 nC, with a Vce(on) of 5.2V at 15V Vge and 30A Ic. The IXGH10N300 operates across a wide temperature range of -55°C to 150°C. This device is commonly utilized in high-voltage power conversion applications such as industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic5.2V @ 15V, 30A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge32 nC
Current - Collector (Ic) (Max)18 A
Voltage - Collector Emitter Breakdown (Max)3000 V
Current - Collector Pulsed (Icm)40 A
Power - Max100 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

By providing a telephone number and submitting the form, you are consenting to be contacted by SMS text message and agreeing to our Privacy Policy. Message frequency may vary. Message and data rates may apply. Reply STOP to opt out of further messaging. Reply HELP for more information.
Clients Also Buy