IXGH10N170A
IGBT NPT 1700V 10A TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH10N170A is a high-voltage NPT IGBT designed for demanding power applications. This component features a 1700 V collector-emitter breakdown voltage and a continuous collector current rating of 10 A. With a maximum power dissipation of 140 W and a pulsed collector current capability of 20 A, it is suitable for high-power switching. The device exhibits a typical gate charge of 29 nC, contributing to efficient switching characteristics with specified on-delay and off-delay times of 46 ns and 190 ns, respectively, at 25°C under test conditions of 850 V, 10 A, 22 O, and 15 V. The on-state voltage (Vce(on)) is a maximum of 6 V at 15 V gate-emitter voltage and 5 A collector current. Packaged in a TO-247AD through-hole configuration, the IXGH10N170A is engineered for reliable operation across an extended temperature range of -55°C to 150°C. This component finds utility in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 5A |
| Supplier Device Package | TO-247AD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 46ns/190ns |
| Switching Energy | 380µJ (off) |
| Test Condition | 850V, 10A, 22Ohm, 15V |
| Gate Charge | 29 nC |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 20 A |
| Power - Max | 140 W |