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IXGH10N100U1

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IXGH10N100U1

IGBT 1000V 20A 100W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGH10N100U1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component offers a maximum collector-emitter voltage (Vce) of 1000V and a continuous collector current (Ic) of 20A. Featuring a robust TO-247AD package, it supports through-hole mounting for efficient thermal management. The device exhibits a low on-state voltage drop of 3.5V at 15V gate-emitter voltage and 10A collector current, with a power dissipation capability of 100W. Its typical switching characteristics include a gate charge of 52 nC and a reverse recovery time of 60 ns. The IXGH10N100U1 is suitable for use in renewable energy systems, industrial motor drives, and high-power power supplies. It operates reliably across a wide temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)60 ns
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 10A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C100ns/550ns
Switching Energy2mJ (off)
Test Condition800V, 10A, 150Ohm, 15V
Gate Charge52 nC
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector Pulsed (Icm)40 A
Power - Max100 W

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