IXGH10N100U1
IGBT 1000V 20A 100W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH10N100U1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component offers a maximum collector-emitter voltage (Vce) of 1000V and a continuous collector current (Ic) of 20A. Featuring a robust TO-247AD package, it supports through-hole mounting for efficient thermal management. The device exhibits a low on-state voltage drop of 3.5V at 15V gate-emitter voltage and 10A collector current, with a power dissipation capability of 100W. Its typical switching characteristics include a gate charge of 52 nC and a reverse recovery time of 60 ns. The IXGH10N100U1 is suitable for use in renewable energy systems, industrial motor drives, and high-power power supplies. It operates reliably across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 10A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/550ns |
| Switching Energy | 2mJ (off) |
| Test Condition | 800V, 10A, 150Ohm, 15V |
| Gate Charge | 52 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 100 W |
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