IXGH10N100AU1
IGBT 1000V 20A 100W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGH10N100AU1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. Featuring a 1000V collector-emitter breakdown voltage and a continuous collector current of 20A (40A pulsed), this device offers robust power handling capabilities. With a maximum power dissipation of 100W and a low on-state voltage of 4V at 15V gate-emitter voltage and 10A collector current, it ensures efficient operation. The TO-247AD through-hole package facilitates easy integration into power modules. Key parameters include a gate charge of 52 nC and a reverse recovery time of 60 ns, with switching energy at 2mJ (off). This component is suitable for use in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 10A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/550ns |
| Switching Energy | 2mJ (off) |
| Test Condition | 800V, 10A, 150Ohm, 15V |
| Gate Charge | 52 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 100 W |
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