IXGF36N300
IGBT 3000V 36A 160W I4-PAKManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS IXGF36N300 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a robust 3000V collector-emitter breakdown voltage and a continuous collector current capability of 36A, with a pulsed current rating of 400A. The Vce(on) is rated at 5.2V at 15V gate-emitter voltage and 100A collector current. With a maximum power dissipation of 160W, the IXGF36N300 is suitable for high-power conversion systems. It is supplied in the ISOPLUS i4-PAC™ package, a through-hole mounting solution with 3 leads, facilitating thermal management and robust circuit integration. The device operates across a wide temperature range of -55°C to 150°C (TJ). This IGBT is commonly utilized in industrial power supplies, high-voltage converters, and motor drive applications requiring superior voltage handling and efficient switching characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 5.2V @ 15V, 100A |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 136 nC |
| Current - Collector (Ic) (Max) | 36 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 160 W |
Request a Quote
Clients Also Buy
IXLF19N250A
IGBT 2500V 32A 250W I4PAC
IXGH30N60C3
IGBT 600V 60A 220W TO247AD
IXYX200N65B3
IGBT
