IXGF25N300
IGBT 3000V 27A 114W I4-PAKManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGF25N300 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. Featuring a 3000V collector-emitter breakdown voltage and a continuous collector current rating of 27A, this device is suitable for power factor correction, induction heating, and high-voltage power supplies. The IXGF25N300 boasts a low saturation voltage of 5.5V at 15V gate voltage and 75A collector current, contributing to efficient operation. Its ISOPLUS i4-PAC™ package provides excellent thermal performance and electrical isolation, with a maximum power dissipation of 114W. This through-hole component is rated for operation across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 5.5V @ 15V, 75A |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 75 nC |
| Current - Collector (Ic) (Max) | 27 A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 114 W |
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