IXGF25N250
IGBT 2500V 30A 114W I4-PAKManufacturer: IXYS
Categories: Single IGBTs
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IXYS NPT IGBT IXGF25N250, a high-voltage power semiconductor, offers a 2500V collector-emitter breakdown voltage and a continuous collector current of 30A. This device features a maximum power dissipation of 114W and a pulsed collector current capability of 200A. The Vce(on) is rated at 5.2V with a gate-emitter voltage of 15V and collector current of 75A. The gate charge is 75 nC. Designed for through-hole mounting, it is housed in the ISOPLUS i4-PAC™ package, providing robust thermal and electrical isolation. Operating across a wide temperature range from -55°C to 150°C (TJ), this IGBT is suitable for demanding applications in industrial automation, renewable energy systems, and high-power motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 5.2V @ 15V, 75A |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 75 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 114 W |
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