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IXGF20N300

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IXGF20N300

IGBT 3000V 22A ISOPLUSI4

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXGF20N300 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This through-hole component features a 3000 V collector-emitter breakdown voltage and a continuous collector current rating of 22 A, with a pulsed capability of 103 A. The device exhibits a typical gate charge of 31 nC and a Vce(on) of 3.2 V at 15 V gate-emitter voltage and 20 A collector current. With a maximum power dissipation of 100 W and an operating temperature range from -55°C to 150°C, the IXGF20N300 is suitable for use in high-power switching and motor control circuits. It is housed in the ISOPLUS i4-PAC™ package, providing robust thermal performance and ease of integration. This component finds application in industries requiring high voltage handling and efficient power conversion.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Casei4-Pac™-5 (3 Leads)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 20A
Supplier Device PackageISOPLUS i4-PAC™
IGBT Type-
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge31 nC
Current - Collector (Ic) (Max)22 A
Voltage - Collector Emitter Breakdown (Max)3000 V
Current - Collector Pulsed (Icm)103 A
Power - Max100 W

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