IXGF20N250
IGBT 2500V 23A ISOPLUSI4Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGF20N250 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. Featuring a 2500V collector-emitter breakdown voltage and a continuous collector current rating of 23A (105A pulsed), this component is suitable for power factor correction, motor drives, and industrial power supplies. The device exhibits a Vce(on) of 3.1V at 15V gate-source voltage and 20A collector current, with a maximum power dissipation of 100W. Supplied in the ISOPLUS i4-PAC™ package for through-hole mounting, it operates within a temperature range of -55°C to 150°C. The gate charge is specified at 53 nC, facilitating efficient switching characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 20A |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 23 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 100 W |