IXGC16N60C2D1
IGBT 600V 20A 63W ISOPLUS220Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGC16N60C2D1 is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) with a collector-emitter voltage (Vce) of 600V and a continuous collector current (Ic) of 20A. This PT IGBT features a maximum power dissipation of 63W and a collector current pulse rating (Icm) of 100A. The device exhibits a typical gate charge of 32 nC and a reverse recovery time (trr) of 30 ns, with switching times (Td on/off) of 25ns/60ns at 25°C. The on-state voltage (Vce(on)) is 3V at 15V gate-emitter voltage and 12A collector current. Packaged in an ISOPLUS220™ through-hole configuration, this component is suitable for applications in industrial motor drives, power supplies, and electric vehicle charging infrastructure. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 12A |
| Supplier Device Package | ISOPLUS220™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 25ns/60ns |
| Switching Energy | 60µJ (off) |
| Test Condition | 400V, 12A, 22Ohm, 15V |
| Gate Charge | 32 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 63 W |
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