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IXGC16N60C2

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IXGC16N60C2

IGBT 600V 20A 63W ISOPLUS220

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS HiPerFAST™ IGBT IXGC16N60C2 is a 600V, 20A insulated gate bipolar transistor designed for high-efficiency power switching applications. This PT IGBT features a low VCE(on) of 3V at 15V gate-emitter voltage and 12A collector current, with a pulsed collector current capability of 100A. The device exhibits a gate charge of 32 nC and switching times of 25ns turn-on and 60ns turn-off under test conditions of 400V, 12A, 22 Ohms, at 15V. Its maximum power dissipation is 63W, with a switching energy of 60µJ (off). The IXGC16N60C2 is housed in an ISOPLUS220™ package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseISOPLUS220™
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3V @ 15V, 12A
Supplier Device PackageISOPLUS220™
IGBT TypePT
Td (on/off) @ 25°C25ns/60ns
Switching Energy60µJ (off)
Test Condition400V, 12A, 22Ohm, 15V
Gate Charge32 nC
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)100 A
Power - Max63 W

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