IXGB75N60BD1
IGBT 600V 120A 360W PLUS264Manufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT IXGB75N60BD1 is a 600V, 120A insulated gate bipolar transistor designed for high-efficiency power switching applications. Featuring a maximum collector power dissipation of 360W and a peak collector current of 300A, this device offers a low collector-emitter saturation voltage of 2.3V at 75A and 15V gate drive. The standard input type and a gate charge of 248 nC contribute to its fast switching characteristics, with typical on and off times of 62ns and 220ns respectively. The IXGB75N60BD1 includes a reverse recovery time of 50ns and a switching energy of 3.3mJ (off). Packaged in a through-hole TO-264-3 (PLUS264™) format, it operates reliably across a temperature range of -55°C to 150°C. This component is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and solar inverters.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 75A |
| Supplier Device Package | PLUS264™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | 62ns/220ns |
| Switching Energy | 3.3mJ (off) |
| Test Condition | 480V, 75A, 5Ohm, 15V |
| Gate Charge | 248 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 360 W |
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