The IXYS GenX3™ IXGA36N60A3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT IGBT features a collector-emitter voltage of 600V and a continuous collector current capability of 30A at a case temperature of 25°C, with a pulsed collector current of up to 200A. The device boasts a low on-state voltage of 1.4V at 15V gate-emitter voltage and 30A collector current, contributing to efficient power conversion. With a maximum power dissipation of 220W and a junction temperature range of -55°C to 150°C, it is suitable for high-power switching. Key switching characteristics include a typical turn-on delay of 18ns and a turn-off delay of 330ns, with a reverse recovery time of 23ns, all specified under a 400V, 30A, 5 Ohm, 15V test condition. The IXGA36N60A3 is housed in a TO-263AA surface-mount package, making it ideal for use in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: GenX3™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 23 ns |
| Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 30A |
| Supplier Device Package | TO-263AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/330ns |
| Switching Energy | 740µJ (on), 3mJ (off) |
| Test Condition | 400V, 30A, 5Ohm, 15V |
| Gate Charge | 80 nC |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 220 W |
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