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IXGA30N120B3-TRL

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IXGA30N120B3-TRL

IXGA30N120B3 TRL

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS GenX3™ IXGA30N120B3-TRL is a high-performance PT IGBT designed for demanding applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 60A (150A pulsed). With a maximum power dissipation of 300W and a low collector-emitter saturation voltage of 3.5V at 30A, it ensures efficient operation. The TO-263 (D2PAK) surface-mount package facilitates compact board designs. Key parameters include a gate charge of 87nC, switching energy of 3.47mJ (on) and 2.16mJ (off) under test conditions of 960V, 30A, 5 Ohm, 15V, and a reverse recovery time of 37ns. The operating temperature range of -55°C to 150°C (TJ) supports robust performance in challenging environments. This component is utilized in industries such as industrial motor drives and power supplies.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)37 ns
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 30A
Supplier Device PackageTO-263 (D2PAK)
IGBT TypePT
Td (on/off) @ 25°C16ns/127ns
Switching Energy3.47mJ (on), 2.16mJ (off)
Test Condition960V, 30A, 5Ohm, 15V
Gate Charge87 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)150 A
Power - Max300 W

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