IXGA20N120B3-TRL
IXGA20N120B3 TRLManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGA20N120B3-TRL is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This PT-type IGBT features a 1200V collector-emitter breakdown voltage and a continuous collector current of 36A, with a pulsed capability of 80A. The device exhibits a low on-state voltage of 3.1V at 15V Vge and 16A Ic. Key switching parameters include a gate charge of 51 nC, a reverse recovery time of 31 ns, and switching energies of 920µJ (on) and 560µJ (off) under typical test conditions (600V, 16A, 15 Ohm, 15V). The maximum power dissipation is 180W. This component is available in a TO-263-3, D2PAK surface mount package, supplied on tape and reel for automated assembly. Its robust performance characteristics make it suitable for demanding power conversion applications across various industrial sectors. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 31 ns |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 16A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/150ns |
| Switching Energy | 920µJ (on), 560µJ (off) |
| Test Condition | 600V, 16A, 15Ohm, 15V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 36 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 180 W |
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