IXGA20N120B3
IGBT 1200V 36A 180W TO263Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGA20N120B3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT IGBT features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 36A, with a pulsed rating of 80A. The device offers a maximum power dissipation of 180W and a low on-state voltage (Vce(on)) of 3.1V at 15V gate voltage and 16A collector current. Key switching characteristics include a gate charge of 51 nC and switching energies of 920µJ (on) and 560µJ (off) under test conditions of 600V, 16A, 15 Ohm, and 15V. The IXGA20N120B3 is housed in a TO-263-3, D2PAK package, facilitating surface mounting. Its robust design and operating temperature range of -55°C to 150°C make it suitable for use in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 16A |
| Supplier Device Package | TO-263AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/150ns |
| Switching Energy | 920µJ (on), 560µJ (off) |
| Test Condition | 600V, 16A, 15Ohm, 15V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 36 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 180 W |
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