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IXGA20N120A3-TRL

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IXGA20N120A3-TRL

IXGA20N120A3 TRL

Manufacturer: IXYS

Categories: Single IGBTs

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IXYS GenX3™ Series IXGA20N120A3-TRL is a high-performance Poly-Silicon Emitter (PT) IGBT designed for demanding power applications. This surface mount component, housed in a TO-263 (D2PAK) package, offers a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 120A. The device features a maximum power dissipation of 180W and a low on-state voltage (Vce(on)) of 2.5V at 20A and 15V gate drive. Key switching parameters include a gate charge of 50 nC, typical turn-on delay (Td(on)) of 16ns, and turn-off delay (Td(off)) of 290ns at 25°C. The reverse recovery time (trr) is specified at 44ns. This IGBT is suitable for use in sectors such as industrial motor drives, power supplies, and renewable energy systems. Packaged in a Tape & Reel (TR) configuration for automated assembly.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)44 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Supplier Device PackageTO-263 (D2PAK)
IGBT TypePT
Td (on/off) @ 25°C16ns/290ns
Switching Energy2.85mJ (on), 6.47mJ (off)
Test Condition960V, 20A, 10Ohm, 15V
Gate Charge50 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)120 A
Power - Max180 W

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