IXGA20N120A3
IGBT PT 1200V 40A TO263AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGA20N120A3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT IGBT offers a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 40A, with a pulsed current rating of 120A. The device features a low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 20A collector current, alongside efficient switching characteristics with turn-on delay (Td(on)) of 16ns and turn-off delay (Td(off)) of 290ns at 25°C. With a maximum power dissipation of 180W and a gate charge of 50nC, it is suitable for high-frequency operation. The IXGA20N120A3 is housed in a TO-263AA surface-mount package, facilitating compact designs. Typical applications include industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-263AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/290ns |
| Switching Energy | 2.85mJ (on), 6.47mJ (off) |
| Test Condition | 960V, 20A, 10Ohm, 15V |
| Gate Charge | 50 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 180 W |
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