Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

IXGA12N120A3

Banner
productimage

IXGA12N120A3

IGBT 1200V 22A 100W TO263

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGA12N120A3 is a high-performance GenX3™ series IGBT designed for demanding power applications. This discrete IGBT offers a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 22A, with a pulsed capability of 60A. With a maximum power dissipation of 100W and a low on-state voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 12A collector current, it ensures efficient operation. The device features a gate charge of 20.4 nC and operates across a wide temperature range of -55°C to 150°C. Packaged in a TO-263-3, D2PAK surface mount configuration, this IGBT is suitable for power factor correction, inverters, and uninterruptible power supplies within industrial and automotive sectors.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3V @ 15V, 12A
Supplier Device PackageTO-263AA
IGBT TypePT
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Gate Charge20.4 nC
Current - Collector (Ic) (Max)22 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)60 A
Power - Max100 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IXGA48N60A3-TRL

IXGA48N60A3 TRL

product image
IXGK120N120A3

IGBT PT 1200V 240A TO264

product image
IXGH30N60C3D1

IGBT 600V 60A 220W TO247