IXGA12N100
IGBT 1000V 24A 100W TO263AAManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS IXGA12N100 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a collector-emitter breakdown voltage of 1000V and a continuous collector current capability of 24A, with a pulsed current rating of 48A. The IGBT offers a low on-state voltage (Vce(on)) of 3.5V at 15V gate-emitter voltage and 12A collector current, and a typical switching energy of 2.5mJ (off) under test conditions of 800V, 12A, and 120 Ohm. With a maximum power dissipation of 100W and a gate charge of 65nC, the IXGA12N100 is suitable for power conversion, motor control, and industrial power supply designs. It is provided in a TO-263AA surface-mount package, facilitating efficient thermal management and board integration. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 12A |
| Supplier Device Package | TO-263AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/850ns |
| Switching Energy | 2.5mJ (off) |
| Test Condition | 800V, 12A, 120Ohm, 15V |
| Gate Charge | 65 nC |
| Current - Collector (Ic) (Max) | 24 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 48 A |
| Power - Max | 100 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXLF19N250A
IGBT 2500V 32A 250W I4PAC
