IXG70IF1200NA
IGBT PT 1200V 130A SOT227BManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS IXG70IF1200NA is a high-performance X2PT™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a robust 1200 V collector-emitter breakdown voltage and a 130 A continuous collector current rating, specified under typical test conditions. The PT IGBT architecture offers enhanced switching characteristics. Packaged in a SOT-227B (miniBLOC) chassis mount configuration, it facilitates efficient thermal management. The IXG70IF1200NA is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction (PFC) circuitry, where reliability and high current handling are critical.
Additional Information
Series: X2PT™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | - |
| Supplier Device Package | SOT-227B |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 130 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXYK140N90C3
IGBT 900V 310A 1630W TO264
