Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

IXG100IF1200HF

Banner
productimage

IXG100IF1200HF

IGBT PT 1200V 140A PLUS247-3

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXG100IF1200HF is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the X2PT™ series. This device features a collector-emitter breakdown voltage of 1200V and a maximum continuous collector current of 140A, making it suitable for demanding power switching applications. The PT IGBT topology offers enhanced ruggedness and switching characteristics. Supplied in the PLUS247™-3 package for through-hole mounting, this component is designed for applications in industrial motor drives, power supplies, and renewable energy systems. The standard input type and robust packaging facilitate integration into various power electronic designs.

Additional Information

Series: X2PT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Input TypeStandard
Vce(on) (Max) @ Vge, Ic-
Supplier Device PackagePLUS247™-3
IGBT TypePT
Td (on/off) @ 25°C-
Switching Energy-
Test Condition-
Current - Collector (Ic) (Max)140 A
Voltage - Collector Emitter Breakdown (Max)1200 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IXG65I3300KN

IGBT PT 3300V 85A ISOPLUS264

product image
IXG50I4500KN

IGBT PT 4500V 74A ISOPLUS264

product image
IXA20I1200PZ-TUB

DISC IGBT XPT-GENX3 TO-263D2