IXER35N120D1
IGBT 1200V 50A 200W TO247Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS NPT IGBT, part number IXER35N120D1, is a high-performance power semiconductor device. This component features a 1200 V collector-emitter breakdown voltage and a maximum continuous collector current of 50 A. The IGBT exhibits a low on-state voltage (Vce(on)) of 2.8 V at 15 V gate-emitter voltage and 35 A collector current, with a maximum power dissipation of 200 W. Key switching characteristics include a gate charge of 150 nC and a reverse recovery time (trr) of 80 ns. Designed with an NPT (Non-Punch-Through) IGBT type, it offers robust performance under demanding conditions. The device is packaged in an ISOPLUS247™ (TO-247-3) through-hole package, suitable for applications in industrial motor drives, power supplies, and renewable energy systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 80 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 35A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 5.4mJ (on), 2.6mJ (off) |
| Test Condition | 600V, 35A, 39Ohm, 15V |
| Gate Charge | 150 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 200 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXGA48N60A3-TRL
IXGA48N60A3 TRL
