IXEH40N120D1
IGBT 1200V 60A 300W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXEH40N120D1 is a high-performance NPT (Non-Punch Through) Insulated Gate Bipolar Transistor designed for demanding applications. This component features a collector-emitter voltage of 1200V and a continuous collector current rating of 60A, with a maximum power dissipation of 300W. Key parameters include a low on-state voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 40A collector current, and a gate charge of 150 nC. Switching characteristics are defined by switching energy values of 6.1mJ for turn-on and 3mJ for turn-off, tested under 600V, 40A, 39 Ohm, and 15V conditions, with a reverse recovery time of 180 ns. The IXEH40N120D1 is housed in a TO-247AD package for through-hole mounting and operates within a temperature range of -55°C to 150°C. This device is suitable for power conversion systems in industries such as industrial motor drives, uninterruptible power supplies (UPS), and electric vehicle charging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 180 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 40A |
| Supplier Device Package | TO-247AD |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | - |
| Switching Energy | 6.1mJ (on), 3mJ (off) |
| Test Condition | 600V, 40A, 39Ohm, 15V |
| Gate Charge | 150 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 300 W |
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